 Hello and welcome to this presentation on ST's MDMesh M2 series of high-voltage MOSFETs. ST's MDMesh M2 series of 600 volt and 650 volt superjunction MOSFETs are optimized for use in resonant type power supplies thanks to the low gate charge as well as low output capacitance. The devices also feature low on resistance per die area for reduced conduction losses and perform reliably even when exposed to large voltage transients such as noise and harmonics thanks to the high DVDT ruggedness. The main advantage of this new MOSFET series is the significant gate charge reduction compared to the second generation of MDMesh devices. The devices under comparison are all 190 mili ohm devices and 600 volts rated except for the STP20N65M5 which is a 650 volt MOSFET belonging to the MDMesh M5 series. Another advantage is the well-designed output capacitance profile as can be seen here. Combined with the low gate charge it makes this series perfect fit for resonant type power supplies yet does not suffer when working in hard switching topologies such as PFC, two transistors forward and fly back. In this 200 watt LLC converter efficiency comparison we can see how the new STP24N60M2 MDMesh M2 MOSFET performs better all along the curve. When tested in a hard switching configuration such as a 1 kW 80 kHz constant current mode PFC although the MDMesh M2 MOSFET performs better than the second generation MDMesh MOSFET the 650 volt MDMesh M5 device recovers the gap due to the much better on-state resistance. If you are looking for a MOSFET offering low on-state resistance we recommend that you select one of our MDMesh M5 MOSFETs which feature one of the industry's lowest RDS-ons per area in all package options. For additional information and the complete list of part numbers belonging to the MDMesh M2 series of high-voltage power MOSFETs please visit www.st.com.