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nanoHUB-U Fundamentals of Nanotransistors L3.4: The Ballistic MOSFET

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Uploaded on Nov 13, 2015

Table of Contents:
00:00 Lecture 3.4: The Ballistic MOSFET
00:13 Nanodevice
00:44 Focus on the top of the barrier
01:50 Ballistic MOSFET: linear region
02:06 Linear region with MB statistics (i)
03:27 Linear region with MB statistics (ii)
04:36 Equilibrium Maxwellian velocity distribution
06:06 Unidirectional thermal velocity
07:41 Ballistic MOSFET: linear region
07:46 Ballistic MOSFET: saturation region
08:11 Saturation region with MB statistics
08:54 Carrier density at the top of the barrier
11:51 Saturation region with MB statistics
12:39 Ballistic MOSFET
12:42 Ballistic MOSFET: full VDS range
13:47 Full VDS expression
15:58 Full range ballistic model (nondegenerate)
16:19 Ballistic MOSFET with FD statistics
18:05 FD vs. MB
18:45 Next Lecture

This video is part of the nanoHUB-U course "Fundamentals of Nanotransistors" currently available on nanoHUB at (https://nanohub.org/courses/nt) and on EdX (https://www.edx.org/course/nanotechno...)

This course provides a simple, conceptual framework for understanding the essential physics of nanoscale transistors. It assumes only a basic background in semiconductor physics and provides an opportunity to learn how some of the fascinating new discoveries about the flow of electrons at the nanoscale plays out in the context of a practical device.

The course is divided into four units: Transistors fundamentals Transistor electrostatics Ballistic MOSFETs Transmission theory of the MOSFET

The objective for this course is to provide students with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. The goal is to do this in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. The course is designed for anyone seeking a sound, physical, but simple understanding of how nanoscale transistors operate. The course should be useful for advanced undergraduates, beginning graduate students, as well as researchers and practicing engineers and scientists.

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