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Uploaded on Nov 13, 2015
Table of Contents: 00:00 Lecture 3.4: The Ballistic MOSFET 00:13 Nanodevice 00:44 Focus on the top of the barrier 01:50 Ballistic MOSFET: linear region 02:06 Linear region with MB statistics (i) 03:27 Linear region with MB statistics (ii) 04:36 Equilibrium Maxwellian velocity distribution 06:06 Unidirectional thermal velocity 07:41 Ballistic MOSFET: linear region 07:46 Ballistic MOSFET: saturation region 08:11 Saturation region with MB statistics 08:54 Carrier density at the top of the barrier 11:51 Saturation region with MB statistics 12:39 Ballistic MOSFET 12:42 Ballistic MOSFET: full VDS range 13:47 Full VDS expression 15:58 Full range ballistic model (nondegenerate) 16:19 Ballistic MOSFET with FD statistics 18:05 FD vs. MB 18:45 Next Lecture
This course provides a simple, conceptual framework for understanding the essential physics of nanoscale transistors. It assumes only a basic background in semiconductor physics and provides an opportunity to learn how some of the fascinating new discoveries about the flow of electrons at the nanoscale plays out in the context of a practical device.
The course is divided into four units: Transistors fundamentals Transistor electrostatics Ballistic MOSFETs Transmission theory of the MOSFET
The objective for this course is to provide students with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. The goal is to do this in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. The course is designed for anyone seeking a sound, physical, but simple understanding of how nanoscale transistors operate. The course should be useful for advanced undergraduates, beginning graduate students, as well as researchers and practicing engineers and scientists.