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nanoHUB-U Fundamentals of Nanotransistors L4.4: Theory of the MOSFET I

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Uploaded on Dec 2, 2015

Table of Contents:
00:00 Lecture 4.4: Transmission Theory of the MOSFET I
00:28 Transmission theory of the MOSFET
00:58 Linear region with scattering
02:33 Linear region in the diffusive limit
04:57 Saturation region with scattering
05:22 On-current and transmission
06:21 Consider ballistic case first
07:13 On-current and transmission
10:06 Saturation current
10:22 Transmission in saturation
12:07 Saturation current
13:33 Scattering under low and high VDS
15:33 Operation near the "ballistic limit"
16:15 Landauer Approach
16:47 Low drain to source bias
17:05 Large drain to source bias
18:04 Is mobility relevant at the nanoscale?
19:25 Summary


This video is part of the nanoHUB-U course "Fundamentals of Nanotransistors" currently available on nanoHUB at (https://nanohub.org/courses/nt) and on EdX (https://www.edx.org/course/nanotechno...)

This course provides a simple, conceptual framework for understanding the essential physics of nanoscale transistors. It assumes only a basic background in semiconductor physics and provides an opportunity to learn how some of the fascinating new discoveries about the flow of electrons at the nanoscale plays out in the context of a practical device.

The course is divided into four units: Transistors fundamentals Transistor electrostatics Ballistic MOSFETs Transmission theory of the MOSFET

The objective for this course is to provide students with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. The goal is to do this in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. The course is designed for anyone seeking a sound, physical, but simple understanding of how nanoscale transistors operate. The course should be useful for advanced undergraduates, beginning graduate students, as well as researchers and practicing engineers and scientists.

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