Rating is available when the video has been rented.
This feature is not available right now. Please try again later.
Uploaded on Dec 2, 2015
Table of Contents: 00:00 Lecture 4.4: Transmission Theory of the MOSFET I 00:28 Transmission theory of the MOSFET 00:58 Linear region with scattering 02:33 Linear region in the diffusive limit 04:57 Saturation region with scattering 05:22 On-current and transmission 06:21 Consider ballistic case first 07:13 On-current and transmission 10:06 Saturation current 10:22 Transmission in saturation 12:07 Saturation current 13:33 Scattering under low and high VDS 15:33 Operation near the "ballistic limit" 16:15 Landauer Approach 16:47 Low drain to source bias 17:05 Large drain to source bias 18:04 Is mobility relevant at the nanoscale? 19:25 Summary
This course provides a simple, conceptual framework for understanding the essential physics of nanoscale transistors. It assumes only a basic background in semiconductor physics and provides an opportunity to learn how some of the fascinating new discoveries about the flow of electrons at the nanoscale plays out in the context of a practical device.
The course is divided into four units: Transistors fundamentals Transistor electrostatics Ballistic MOSFETs Transmission theory of the MOSFET
The objective for this course is to provide students with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. The goal is to do this in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. The course is designed for anyone seeking a sound, physical, but simple understanding of how nanoscale transistors operate. The course should be useful for advanced undergraduates, beginning graduate students, as well as researchers and practicing engineers and scientists.