 This paper presents a novel method for integrating thin film lithium niobate, LINBO3, onto silicon nitride, Si3N4, photonic integrated circuits, PIX. This technique allows for the creation of fully integrated LINBO3 PIX with high precision and reproducibility. The authors demonstrate several applications of their platform, including adiabatic mode conversion, which can be used to connect passive Si3N4 circuits to active LINBO3 components. This work represents a significant step towards the wide-spread use of LINBO3 in photonic integrated circuits. This article was authored by Mikhail Cheriev, Ruining Wang, Anina Reed-Hauser, and others.