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Nanoscale Transistors Lecture 10: Scattering Model

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Uploaded on Aug 30, 2012

This lecture is part of the "Nanoscale Transistors" course offered as part
of the "NCN@Purdue 2012 Summer School: Electronics from the Bottom Up"

On nanoHUB.org at http://nanohub.org/resources/14771

Table of Contents:
00:09 Lecture 10: Scattering Model
00:28 Landauer approach to transport
01:24 ballistic MOSFET (MB)
01:57 transmission
03:08 scattering: linear region
03:54 example
05:38 ballistic MOSFET (MB)
05:58 on-current and transmission
10:33 ballistic MOSFET (MB)
11:29 recall: ETSOI MOSFET
12:08 transmission under low and high VDS
13:43 scattering under high VDS
18:42 operation near the "ballistic limit"
19:45 is mobility relevant at the nanoscale?
21:40 connection to traditional model: linear
24:03 connection to traditional model: linear region
25:13 connection to traditional model: saturation
26:17 current transmission in a MOSFET
29:34 VS model for the MOSFET
30:10 a more physical VS model for a MOSFET
30:27 wrap-up
31:07 references

"Electronics from the Bottom Up" is an educational initiative designed to
bring a new perspective to the field of nano device engineering. It is
co-sponsored by the Intel Foundation and the Network for Computational
Nanotechnology. http://nanohub.org/topics/Electronics...

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