nanoHUB-U Fundamentals of Nanotransistors L3.5: The Velocity at the VS





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Uploaded on Nov 13, 2015

Table of Contents:
00:00 Lecture 3.5: The Velocity at the VS
00:27 Current is velocity times charge
00:45 Average velocity at the top of the barrier
01:41 Velocity vs. VDS
02:09 Velocity for small VDS
03:41 The meaning of "ballistic mobility"
05:47 Velocity vs. VDS
07:05 "Signature" of velocity saturation
08:02 Maxwellian velocity distribution
09:23 Filling states at the top of the barrier
12:55 Ballistic injection velocity
15:10 Ballistic injection velocity
16:32 Maxwell-Boltzmann vs. Fermi-Dirac statistics
17:49 Key points
18:34 Next lecture

This video is part of the nanoHUB-U course "Fundamentals of Nanotransistors" currently available on nanoHUB at (https://nanohub.org/courses/nt) and on EdX (https://www.edx.org/course/nanotechno...)

This course provides a simple, conceptual framework for understanding the essential physics of nanoscale transistors. It assumes only a basic background in semiconductor physics and provides an opportunity to learn how some of the fascinating new discoveries about the flow of electrons at the nanoscale plays out in the context of a practical device.

The course is divided into four units: Transistors fundamentals Transistor electrostatics Ballistic MOSFETs Transmission theory of the MOSFET

The objective for this course is to provide students with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. The goal is to do this in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. The course is designed for anyone seeking a sound, physical, but simple understanding of how nanoscale transistors operate. The course should be useful for advanced undergraduates, beginning graduate students, as well as researchers and practicing engineers and scientists.


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