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Uploaded on Nov 13, 2015
Table of Contents: 00:00 Lecture 3.5: The Velocity at the VS 00:27 Current is velocity times charge 00:45 Average velocity at the top of the barrier 01:41 Velocity vs. VDS 02:09 Velocity for small VDS 03:41 The meaning of "ballistic mobility" 05:47 Velocity vs. VDS 07:05 "Signature" of velocity saturation 08:02 Maxwellian velocity distribution 09:23 Filling states at the top of the barrier 12:55 Ballistic injection velocity 15:10 Ballistic injection velocity 16:32 Maxwell-Boltzmann vs. Fermi-Dirac statistics 17:49 Key points 18:34 Next lecture
This course provides a simple, conceptual framework for understanding the essential physics of nanoscale transistors. It assumes only a basic background in semiconductor physics and provides an opportunity to learn how some of the fascinating new discoveries about the flow of electrons at the nanoscale plays out in the context of a practical device.
The course is divided into four units: Transistors fundamentals Transistor electrostatics Ballistic MOSFETs Transmission theory of the MOSFET
The objective for this course is to provide students with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. The goal is to do this in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. The course is designed for anyone seeking a sound, physical, but simple understanding of how nanoscale transistors operate. The course should be useful for advanced undergraduates, beginning graduate students, as well as researchers and practicing engineers and scientists.