 2D ferroelectric semiconductor alpha into C3 is used as channel material in field effect transistors for its retentive and switchable dipoles, flexibility to be compacted into diverse structures, and efficient device architecture at the nanoscale. The study demonstrates a large memory window of 13V and an on-off ratio reaching 103V by controlling in-plane polarization, which is modulated by the bottom gate voltage of the C substrate due to inter-correlation without of plane polarization. Non-volatile memory characteristics including stable retention lasting 17H and endurance over 1200 cycles suggest a wide range of memory applications utilizing the lateral bottom contact structure. This article was authored by Shiro Miao, Ryosuke Nitta, Sakairo Izawa, and others.