 The pulsed laser deposition technique was used to grow single-layer and few-layer MOS-2 films on single-crystal sapphire substrates. The films were grown using a K.R.A.F. excimer laser, wavelength, 248 nanometers, pulse width, 25 ns. The material thus ablated was deposited onto a single-crystal sapphire, 0001, substrate kept at 700 degrees Celsius in an ambient vacuum of 10-6 Tor. Characterization of the films included atomic force microscopy, AFM, Raman spectroscopy, UVvis spectroscopy, and photoluminescence, PL measurements. The ablation of the MOS-2 target by 50 laser pulses resulted in the formation of a monolayer of MOS-2 as confirmed by AFM results. In the Raman spectrum, a 1G and E12G peaks were observed at 404.6 Cm-1 and 384.5 Cm-1 with a spacing of 20.1 Cm-1, confirming the monolayer thickness of the... This article was authored by Gene Siegel, Y.P. Venkatesabaya, Megan C. Presgard and others. We are article.tv, links in the description below.