 आजी आमी आलुसना कोरिवो उल्वा बिखुए ती हो यसे सेमिकन्डाक्तर दिवाइसेच अर्ठाद इखाद पोरीभाई जाटन आई बिखुए ती आमार सनातोग प्रोईजायर, दिप्लमा पाइप्टोक्रम, कुमपुटर, हार्ट्वेर, इन नेट्रोकिगर, प्रत्हम् सनी ब्दाछ अब बिफाजँन, यार पीसोद प्य न जंक्षन डय़एद, आलुसना कुरिप। इत्ता प्रथमते आमी गलसीटीके क्षन आब मेट्यौल्स अब पडाट्ठ्ठर सनी ब्भाचन ताएबिख़ो आग्ट्विषना कुरु। jīkunu jātan gārdi bale hale padātthār habašyāk boidhūtik paribahitār bohistār uparāt bhittikuri hokulu padātthā tīnita bhāgāt bhokvā hoise prathāṁto hoise kandātthāt paribahi padātthā dhitya to hoise insulator otthāt aparibahi padātthā aru tritya to hoise semikandātthāt ikhāt paribahi padātthā eibhūr padātthāt boidhūtik paribahinār bohistā hokti pandhāni hohāyare baikhākuri boh pāri ehti āmi prathāmate kandātthāt bhi kātha alu sanā kuru jībūr padātthār māidhāme dhi bidhūt prabā utti hojote prabāhitao koribahpare hei padātthā bura kandātthāt bo li kā hoi jene lu, tam, eluminium itādi kandātthāt jathe shto hoinkhāk elektron tāke jārbā be bidhūt prabāt prabāhita hoi e elektron ho muhar resistivity aṭhāt rudhokatta jathe shto kom hoi e 10 to the power minus 8 to 10 to the power minus 6 ohm meter or meter or pare ehti āmi shto tekhādhārne hokti bandhāni aṭhāt energy band diagram for conductors anadhārnar hoi jāte dhūta bandhāni tāke aṭhāhuise valence band bā asādhita bandhāni arueta conduction band bā pori bahi bandhāni e dhūta bandhāni upara uporikhoi kandāththārāt tāke valence bandhāni jibhūt elektron tāke tāk valence bandhāni bo li kā hoi jihetu jāte conduction bandhāni balence bandhāni upara uporikhoi tāke goti ke valence elektron bur valence bandhāni tākhthāri kandāththārne ‌ 사건, ‌ iley a pharmacist ‌ipplearm नको किरो सतो सेमिव कर्धषानी लेणने locker मspace नको किर baskets अच�pson नको क्यर होंगया उपनो प hari अतो स Boden दुन грind समिइ खरिप base खरिप candidates high ुईवätter करिक्डा advocates करिक्ड़़ अ Después pe ओस create प्रुषन ठाla तो अछन सो than skle V render valance electron hommu purna hoithake aro conduction bandor bandu hommu purna khali hoithake koti ke kunu electron valance electron conduction bandolui probahito hoibha nuare goti ke eti semiconductor 0 calvin osnota aopori bahi padartho hi sape așoran kore thaned horene jodi ami osnota kisu purimane biddhi koru thaned horene jodi ami osnota , tete ya valence electron homo conduction bandoloy goti kare. Hadharon usnotat ottha 300 kelvin usnotat e valence electron homo conduction bandoloy goti kare, tete ya eta semiconductore conductor hesape asaron kare. Tete ya ami semiconductoror kiki prakaror he bhi khoye alusanakorim. Ikhat poribahi ottha semiconductor mulata dhuta bagot bhi bhokta kora hoese. Atta hoese intrinsic or pure semiconductor ottha antorni hita bha bhi khuddha poribahi aru dritya tu extrinsic or impure semiconductor ottha baribhuta bha ohuddha ikhudd poribahi. Ako extrinsic semiconductor dhuta prakara bhi bhokta kora hoese. Atta hoese p-prakar ottha p-type semiconductor aru dritya tu n-prakar ottha n-type semiconductor. Ette ya ami intrinsic semiconductor bha antorni hita semiconductor bhi khoe alusanakoru. Jibur semiconductor bhi khuddha format tha ke he semiconductor bura intrinsic semiconductor buli kua hoe. Sitra dekhwa dhora ne intrinsic semiconductoror protect to atomor bha hiror koi khuddha sarita koi valence electron tha ke. Ette ya atta atta me sthir gathoni pa bole hole nikotoborti atomor pora aru sarita electronar proyujan hoe. Ette ya sitra dekhwa dhora ne protect to atomor bha hiror koi khuddha kaa sarita valence electrone nikotoborti atomor bha hiror koi khuddha kaa sarita valence electronar lagot koe valence bondar srishti kora. Jiro kelvin usnotat e electron burae nijor nucleasor lagot jihobabhe hankipta hoi tha ke. Aru tetya e semiconductor dhue eti insulator hisape asaron korae. E sitra intrinsic semiconductor at absolute zero temperature aru gathoni tu dekhwa hoese. Jetya usnota biddhi hoi, tetya kisuman koe valence bond bhangizai aru tha tha ka electron homo koe valence bondar pra ulai ahi mukta obostat gusiahe. Aru hei electron homo free electron buli kaum. Ulai aha electronar thaite eti gathor srishti hoi jak hol buli kua hoi. Intrinsic semiconductor aru free electronar hoen kha aru holor hoen kha ho man tha ke. E hol hoise thaunatmok adhan jukta. Aru electron hoise renatmok adhan jukta. Jetya eta intrinsic semiconductor ata battery hongla gna kora hoi. Tetya thaar majeti pravahito hoa biddhut. Electron aru holor pravahitor jukfolor homan hoi. Etya ami extrinsic semiconductor bhi koe alusana kuru. Jetya eta intrinsic semiconductor ata kisu hoinkhok. Impeored atom artha ahuddha atom log log wa hoi. Taar pravahikata biddhir ba be. Tetya hei semiconductor to extrinsic semiconductor buli kua hoi. Aru hei ahuddha atom ar biddhite extrinsic semiconductor rok dhuta bagot foga hoise. Etta hoise p-type aru anthu hoise n-type. Next p-type semiconductor. Jetya trivalent impurity atom intrinsic semiconductor hongjuk kora hoi. Tetya hei semiconductor to p-type semiconductor buli kua hoi. Trivalent impurity atom ar udha haran hol boron aluminium gellium indium itadi. E impurity atom rok acceptor impurity atom buli kua hoi. Eetya citro dekhwadharne boron atom ata intrinsic semiconductor logot hongjuk kora hoise. Jihetu boron atom ar valence electron t-nita e nikotoborti an semiconductor logot covalent bond gathankure. Aru sotuddha covalent bond to kaliobostat thake. Eetya citro dekhwadharne ata boron atom intrinsic semiconductor logot hongjuk kora hoise. Jihetu boron atom ar t-nita valence electron thake. E t-nita valence electron ne nikotoborti an t-nita silicon atom logot covalent bond gathankure. Sotuddha to valence electron hongpurna hoi thake. Guthike covalent bond gathankure. Usorar covalent bondar tap hok tir dara tathaka valence electron ulai ahi e kali thaytu purankure. Tare fallot eety holor aathad gathor utpanna hoi. Guthike p-type semiconductor holor hongkha pesi hoi aru electroner hongkha komthake. Ami kobo paru p-type semiconductor rot majority charge carrier hisape hol thake. Aru minority charge carrier hisape electron thake. Next n-type semiconductor je t-ya ata pentavalent impurity atom intrinsic semiconductor logot hongjuk kora hoi. Te t-ya he semiconductor to n-type semiconductor buli kuah hoi. Pentavalent impurity atom hoi se phosphorous arsenic antimony ittadi. Ehi impurity atomor bahiroor ko ikkot pastakoi valence electron thake. Sitro dekhwa dharane je t-ya ami ata phosphorous atom intrinsic semiconductor logot hongjuk kora hoi. Te t-ya phosphorous or sarita valence electrone yaar nikotoborti silicon atomor logot sarita covalent bond gathankure. Aru past number electron to mukta obostat thake. Ehi electron to nijor nucleusor logot kom jihotare hongkepto hoi thake. Aru ehi electron to he he n-type semiconductor biddhut puribahirbabe dayoboddho. Ehi pentavalent impurity atom to donor atom buli kuah hoi. Je he to yat extra electron ata thake. Ehi electron to he belek covalent bond gathankure buli electron jugandhoribohare. N-type semiconductor majority charge carrier hisape electron thake. Aru minority charge carrier hisape hole bagat thake. Yaar pisaut ami PN junction diode bhi khe alosanakurim. PN junction diode hoi se ata semiconductor device jar majedi ek mukhi biddhut probahit hoi. Ehi diode protic anadhoronor. Ehi phale P side aru anphale N side thake. Ehi to hoi se ata PN junction diode. Ehi diode tur ata phale ata silver coloror coat ase. Aru antu phale konu coat nai. Ehi notho ka phalto positive atat anode buli kuai. Aru silver coat thoka side to negative atat cathode buli kuah hoi. Ehi diode dur bhi khe alosanakurim. Anipotta ami PN junction nor bhi khe tisu alosanakurimi. Je tiedia ata P type semiconductor atta N type semiconductor lagot hong jug kora hoi. Ata eti yeh hong jug pistokhanok PN junction buli kuah hoi. Ami agote alosanakurim hesu je P type semiconductor ata majority charge carrier hole thake. Aru ranatmok adhanjuk free ion thake. ƌ,  ór ウ                                                         sacchikya vite, atta defusion aarmbohaye young body. Ndre kisu diffusion war pisat einata pohijaye mai jotne ki aru parobhoti bisthaar nageote, tetyat ata preventive force atta niramaye bolur sristi haye innutne aore ata a preventive force atta niramaye bolur sristi haye. A bultu ke bhe buyer booli kwa haaye. A bearer ae parobhoti difusion watch atta bhi sashnes hai 와ad bada prad fuss fabغ mais a어 puno the sinful goods know klea. • PUNOR NIJUADBANDHAN�� בieben могли), • PDHD RINATMURG EXCELAPTER漂, • ANDYHD DONEWZ ION or DATA ion or algunas ahised yaks with the reins standing up on theam yaks experine trying to read the abuse, • DUNATMURG DONOR IRON OR DATA IRON, •atif JONGSA NIJUAN CO • CO standards andolled by different components. 4 РОТЫРИКРИ��Ь, HOLD, DG ELECTRON, تم Möglichkeiten and the six old, tremendous electrical integrity and stickablity of etc. .. Extreme fibre is made out of the stability and the energy used at the brink of vibration in the project of the inverter. thriving and both will also 93 in terms of variety in both. ��� র র রর র র র র র র র র র র র র র l র র র র র . PN jonkshanot hongju karahaye aru tare positive side to P type ot aru negative side to N type ot hongju karahaye te tia tak forward bias buli kuahaye. E forward bias PN jonkshanot sitra ame bisle khan kori buli esu, te tia forward bias or PN jonkshanot batteri dhanatmak me durpara dhanatmak adhanjukta hol bul bikorkita hai aru jonkshanot phale guti kare aru elektron batteri dhanatmak dhanatmak bikorkita hai jonkshanot phale probahita hai. Forward voltage puri gaur babe budhuti khetro ekhan gaur lay aru potential barrier aur khetro bipuri te kajju hampadan kare. E khetro durbol hai aru bol bipobar ba potential barrier aru khali ansholot otta depletion region aru khanotta ba thickness to komi jai. Falsarrupe bohukho henghok hol aru elektron majority keryar jonkshanot otikrom kare aru phalot ei bottonit ei sarkitot karentor probah khote. Ane probahok forward bias karent buli kuahaye. Forward jonkshanot resistance to kum thake aru ekhinite koi thong jai yat minority keryar jonk babeyu khoop kom purimanar bipuritmukhi probahar upostitiv upolobti hai. E probah minority keryar jonk phalot hai aru ei usnotar upolot nirvar khil. Aru ei applied voltage ur upolot independent othat nirvar nakare. Next amisaw reverse bias pn jonkshan. Jtia at a battery negative side to p type semiconductor lagot aru positive side to n type semiconductor lagot hong juk hai. Jtia yat reverse bias pn jonkshan buli kuahaye. Reverse bias pn jonkshanot sitar bohisto anadharanar pd khor hol homu aru nd khor elektron homu kroman noi battery renatmuk aru dhanatmuk meruk akorhan kare. Gotike majority keryar homu jonkshanot para aturi jai. Follot depletion reasonar khanatta ba thiknes ba ri jai. Ea potential barrier briddhi kare aru charge keryar aru upolot high resistance prayuk kare. Follot pn jonkshan otikrom kori boloi nirnotom bohidutik prabha srisitik kare. Obois se negative keryar aru babhe circuitot otik kompori manor prabhaar hoot bohaye. Ei prabhaake reverse karen buli kuahaye. Ei prabhaar matra bur kom aru usnotar upolot nirvar hil. Yar matra silikonot nano ampere aru germania mot micro ampere hoi. Ethiya ami he khot vi characteristics of pn jonkshan diodor bikhaye alosana kori boloi su. Vi characteristics hoise a graph which is drawn between the voltage and the current. X axisor phale ami voltage plot koru aru y axisor phale ami current plot koru. G karen diodor pn jonkshan diodor majere prabhaite hoi. Ethiya circuitot ekhwamate dhole atta diode. Jot ami vi voltage atta battery honglog na kori su. Aru a battery voltage 2 ami p potentiometer hoi re kombesi kori boh paru. Ame a atta atta emmeter ami kanek koru su. Diodor majere prabhaite hoi bodutik prabha jukhi boh karne. Aru vi e voltage e diodor majere joa voltage tu jukhi boh karne. Ami vi voltmeter atta honglog koru su. Aru resistance r ami atta honglog koru su. Ethiya vi characteristics kaar bot ami tinita hakhat nirdharan kori boh paru. He hakhaketa hol 0 external voltage region forward bias region aru atta reverse bias region. Ethiya ami diodeot kunu voltage apply no koru. Ethiya at kunu bodutik prabha 30 nahoi. Aru e 0 external voltage region tu ami e hini o pointot dekhawaparu. Ethiya lahe lahe ami voltage apply koru le diodeot majere bodutik prabhaita hoi boh. Aru ethiya e applied voltage potential barrier voltage otke kam hoi. Ethiya khoop lahe lahe bodutik prabha diodor majere di prabhaite hoi. Aru e hini ke ami e reason khinir khawahare dekhawaparu. Aru ethiya ami applied voltage lahe lahe borahe diu. Aru e potential meter value cross kore. Ethiya ami bodutik prabha lahe lahe bridhi hoa dekhawaparu. Aru eta kho moyot e kroman noi e dal horol rekhar dhore bridhi hoi goi dekhawaparu. Ehi ni reason ke ami forward bias karen buli kam hoi. Ethiya diodeot reverse bias proyukorile potential barrier bridhi hoi. Fallot junctionor resistanceor matra barizai. Aru bortonir majere di otat e circuitor majere di kunu dhornor bodutik prabha 30 nahoi. Reverse bias karane ami battery 2 uluta kori dibola gibo otat negative 2 ami diodeor p type ot hongju kori bo la gibo aru positive 2 ami n type ot hongju kori bo la gibo. Reverse bias or fallot khuk kam pori manor biddhut prabha diodeor majere di ghote. Jack ami reverse saturation karen buli kam. Ethiya reverse bias lahe lahe borahe diu. Ethiya reverse saturation karen bridhi hoi. Aru e kroman nahi barizai fallot junctionor bangun ghote. Ami ekinik breakdown reason buli kam. Priyodor khok aji ami alu sanakara bhikhai bo stu keita hoise classification of materials. Aru pn junction diode. Diodeor bitorot ami pn junction nu ki tar bhikhai kisukata he kilu. Aru vi characteristics of pn junction diodeor bhikhai. Kisukata alu sanakari lo. Yar prarabhoti pojjai ot ami janar diode transistor. Field effect transistor. Power transistor. Aru light dependent resistor bhikhai alu sanakari. Namaskar.