nanoHUB-U Fundamentals of Nanotransistors L3.1: Introduction





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Uploaded on Nov 13, 2015

Table of Contents:
00:00 Lecture 3.1: Introduction
01:43 Unit 3
02:21 Ballistic vs. diffusive transport
03:49 Thermionic emission
05:01 Thermionic emission
05:22 Ballistic current
06:18 MOS electrostatics
06:39 MOS electrostatics
08:53 Ballistic IV characteristics
09:28 Recall: traditional model in linear region
09:52 Ballistic MOSFET: Linear region
10:31 Traditional vs. ballistic linear current
12:39 Ballistic model in linear region
13:25 Recall: Traditional model in saturation
13:51 Ballistic MOSFET: Saturation region
14:18 Traditional vs. ballistic saturation current
14:46 Recall: VS model
15:12 Ballistic model
15:48 The ballistic MOSFET
16:49 Transport

This video is part of the nanoHUB-U course "Fundamentals of Nanotransistors" currently available on nanoHUB at (https://nanohub.org/courses/nt) and on EdX (https://www.edx.org/course/nanotechno...)

This course provides a simple, conceptual framework for understanding the essential physics of nanoscale transistors. It assumes only a basic background in semiconductor physics and provides an opportunity to learn how some of the fascinating new discoveries about the flow of electrons at the nanoscale plays out in the context of a practical device.

The course is divided into four units: Transistors fundamentals Transistor electrostatics Ballistic MOSFETs Transmission theory of the MOSFET

The objective for this course is to provide students with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. The goal is to do this in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. The course is designed for anyone seeking a sound, physical, but simple understanding of how nanoscale transistors operate. The course should be useful for advanced undergraduates, beginning graduate students, as well as researchers and practicing engineers and scientists.


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