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Uploaded on Nov 13, 2015
Table of Contents: 00:00 Lecture 3.1: Introduction 01:43 Unit 3 02:21 Ballistic vs. diffusive transport 03:49 Thermionic emission 05:01 Thermionic emission 05:22 Ballistic current 06:18 MOS electrostatics 06:39 MOS electrostatics 08:53 Ballistic IV characteristics 09:28 Recall: traditional model in linear region 09:52 Ballistic MOSFET: Linear region 10:31 Traditional vs. ballistic linear current 12:39 Ballistic model in linear region 13:25 Recall: Traditional model in saturation 13:51 Ballistic MOSFET: Saturation region 14:18 Traditional vs. ballistic saturation current 14:46 Recall: VS model 15:12 Ballistic model 15:48 The ballistic MOSFET 16:49 Transport
This course provides a simple, conceptual framework for understanding the essential physics of nanoscale transistors. It assumes only a basic background in semiconductor physics and provides an opportunity to learn how some of the fascinating new discoveries about the flow of electrons at the nanoscale plays out in the context of a practical device.
The course is divided into four units: Transistors fundamentals Transistor electrostatics Ballistic MOSFETs Transmission theory of the MOSFET
The objective for this course is to provide students with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. The goal is to do this in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. The course is designed for anyone seeking a sound, physical, but simple understanding of how nanoscale transistors operate. The course should be useful for advanced undergraduates, beginning graduate students, as well as researchers and practicing engineers and scientists.