 Thin film transistors, TFTs, are key components for the fabrication of electronic and optoelectronic devices, resulting in a push for the wider exploration of semiconducting materials and cost-effective synthesis processes. To address these challenges, a simple approach was developed to produce 2-nanometer thick indium oxide nano sheets from liquid metal surfaces using a squeeze printing technique and thermal annealing at 250 degrees Celsius in air. The resulting materials exhibited a high degree of transparency, greater than 99%, and an excellent electron mobility of approximately 96 cm2 per volt second, surpassing that of pristine printed 2-dimensional indium oxide and many other reported 2-dimensional semiconductors. Additionally, ultraviolet detectors based on annealed 2-dimensional indium oxide also benefited from this process step, with the photoresponsivity reaching 5.2 x 10 to the 4th and 9.4 x 10 to the 3rd amperes per watt at the wavelengths of 2,800 and 3,365 nanometers, respectively. This article was authored by Chung Kim In-Wen, Ace Hani Mazumdar, Edwin LH Mays, and others. We are article.tv, links in the description below.