 We have successfully grown single layer and few layer MOS-2 films on single crystal sapphire substrates using a pulse laser deposition technique. A pulsed KRF excimer laser, wavelength, 248 nanometers, pulse width, 25 ns, was used to ablate a polycrystalline MOS-2 target. The material thus ablated was deposited on a single crystal sapphire, 0001, substrate kept at 700 degrees Celsius in an ambient vacuum of 10-6 Torr. Detailed characterization of the films was performed using atomic force microscopy, AFM, Raman spectroscopy, UVVIS spectroscopy, and photoluminescence, PL, measurements. The ablation of the MOS-2 target by 50 laser pulses, energy density, 1.5J slash CM2, was found to result in the formation of a monolayer of MOS-2 as shown by AFM results. In the Raman spectrum, A1G and E12G peaks were observed at 404. This article was authored by Gene Siegel, Y.P. Venkatesabaya, Megan C. Prestgard, and others.