 The use of 4-H silicon carbide, 4-H, SICK, has been proposed as a promising material for high power and high frequency electronics due to its excellent thermal conductivity, high breakdown voltage, and low leakage current. However, the fabrication of 4-H, SICK wafers requires specialized processes such as chemical mechanical polishing, CMP. Improved CMP techniques can increase the efficiency of the process and reduce the cost of production. This paper reviews the properties of 4-H, SICK and the various methods used to enhance the performance of CMP. It also discusses the potential benefits of combining chemical, mechanical, and chemical-mechanical synergy to further improve the performance of CMP. This article was authored by Wang Dong Wang, Xu Asong Lu, Shin Kowoo, and others.