 Phase pure beta-beta-dash al-xga1x203 thin films are grown on beta-ga203 substrates by a metalorganic chemical vapor deposition. By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained beta-beta-dash al-xga1x203 films is demonstrated with up to 25% al compositions as evaluated by high-resolution x-ray diffraction. The asymmetric reciprocal space mapping confirms the growth of coherent beta-beta-dash al-xga1x203 films, x less than 25%, on beta-ga203 substrates. However, the alloy inhomogeneity with local segregation of al along the 201 plane is observed from atomic resolution scanning transmission electron microscopy, resulting in wavy and inhomogeneous interfaces in the beta-beta-dash al-xga1x203 slash beta-ga203 superlata structure. Room temperature Raman spectra of beta-beta-dash al-xga1x. This article was authored by AFM and Harudin Buyan, Ling Yumeng, Xinlin Huang, and others. We are article.tv, links in the description below.