 Hello and welcome to this presentation on ST's 60V StripFat F7 MOSFET series. ST's StripFat F7 series of low voltage trench gate MOSFETs has been extended with the introduction of 60V devices. ST's StripFat F7 series features an enhanced trench gate structure that lowers device on-state resistance while also reducing internal capacitances and gate charge for faster and more efficient switching. The devices also have high avalanche ruggedness, making them ideal for rugged designs. ST's 60V StripFat F7 MOSFETs are tailored for synchronous rectification in telecom, servers, adapters and desktop applications. Other applications include UPS, motor control and industrial systems as well as solar microinverters and DC to DC converters. Compared to the previous StripFat F6 generation, the new 60V F7 devices feature up to 65 and 70% lower on-state resistance per area and figure of merit values respectively. The new 60V STL220N6F7 also features one of the industry's lowest on-resistance values in a Powerflat 5x6 package. Compared with the closest competitor's devices, the STL220N6F7 features a lower on-state resistance and 40% lower reverse recovery charge, resulting in greater efficiency. The extremely low recovery charge of the intrinsic diode makes this technology ideal for high-frequency switching applications and synchronous rectification. As shown in the following efficiency curve, when tested in a 150W LLC converter, ST's STL220N6F7 performed better than the closest competitor's device over the entire current range. For additional information and the complete list of part numbers belonging to the StripFat F7 series of low-voltage power MOSFETs, please visit www.st.com.