 Rhombohedral graphite is a unique material which can host strong electronic correlations due to its special structure. It has two layers of atoms arranged in a rhombohedral pattern, with one layer rotated by 60 degrees relative to the other. This creates a twin boundary between the two layers, which can trap electrons and create a band gap. The presence of this band gap allows for the creation of a semiconductor state, while the rhombohedral structure itself provides a unique opportunity for strong electron correlations. This article was authored by Ida Garcia-Ruiz, Sergei Szozovsky, and Vladimir Ifako.