 Transition metal dichalcogenides, TMDs, have been gaining attention recently due to their potential applications in electronics, autoelectronics, memory devices, batteries, superconductors, and hydrogen evolution reactions. However, most TMDs lack ferromagnetism at room temperature, which limits their use in spintronic applications. Recent studies have shown that ferromagnetism can be induced in TMDs through doping, vacancies, heterostructure compositions, phase modulations, and adsorptions. Additionally, electron irradiation, oxygen plasma treatment, and other techniques have been used to induce ferromagnetism in TMDs. These techniques have been successful in producing ferromagnetic TMDs, but further research needs to be done to optimize them and make them more reliable and efficient. This article was authored by Fan Yang, Ping Hu, Fairy Fan Yang, and others.