 Hello everyone and welcome to ST-BOOF during CES 2024. I'm Cosimo Lornardi, Product Marketing Manager for Power Transistor, based in Santa Clara, ST Microelectronics. Are you looking for a way to make ED components smaller and more efficient than you can today, right away? In ST, we have developed GAN products based on HEMT technology, high electron mobility technology transistor. For Power GAN, ST is focused on 100V and 650V glasses with innovative top-side cooling packages. ST GAN technology can address systems like onboard charger and DC DC converter for EVs, training the size of the system by the faster and cleaner switching performance. The main benefit of GAN versus standard silicon are lower on resistance, lower capacitance and really unbearable recovery charge. That means lower power losses, smaller passive and less filter components. Here we can look at a prototype with ST GAN technology. This demonstrates the potential of GAN in automotive applications. The demo is a 7.4 kW 800V 300KHz prototype with Power GAN. The performance of topology is a free-level DC DC converter with a 650V GAN product using phase shift modulation strategy for OB-C application. Why is a multi-level DC DC converter needed? The multi-level approach with GAN gives three main benefits. Less conduction and switching losses are generated versus standard silicon one. Reduction of the power transformer size thanks to the high working frequency and very low harmonic content, so better EMI performance. The experimental results of this board of this three-level DC DC converter with a 650V power GAN show a maximum 7.4 kW operation achieved at a switching frequency of 300KHz, still maintaining a very good efficiency of about 98%. To summarize, smaller, lighter, more efficient high voltage DC DC converter is achievable with our ST GAN family. For more information, please do not hesitate to contact us. Thank you.