 The pulsed laser deposition technique was used to grow single layer and few layer MOS-2 films on single crystal sapphire substrates. The films were grown using a KRF Eximer laser, wavelength, 248 nanometers, pulse width, 25 and S. The material thus ablated was deposited onto a single crystal sapphire, 00001, substrate kept at 700 degrees Celsius and an ambient vacuum of 10-6 Tor. Characterization of the films included atomic force microscopy, AFM, Raman spectroscopy, UV vis spectroscopy, and photoluminescence, PL measurements. The ablation of the MOS-2 targeted by 50 laser pulses resulted in the formation of a monolayer of MOS-2 as confirmed by AFM results. In the Raman spectrum, a 1G and E12G peaks were observed at 404.6CM-1 and 384.5CM-1 with a spacing of 20.1CM-1 confirming the monolayer thickness of the... This article was authored by Gene Siegel, Y.P. Venkatesabaya, Megan C. Prestgard, and others. We are article.tv, links in the description below.