 Hello, and welcome to this presentation on ST StripFet F7 series of low voltage MOSFETs. ST series of 80 and 100 volts StripFet F7 MOSFETs feature an enhanced trench gate structure that lowers device on state resistance while also reducing internal capacitances and gate charge for faster and more efficient switching. The devices also have high avalanche ruggedness, making them ideal for rugged designs. As we can see in this slide, compared to the previous StripFet F4 and F3 series, the new F7 series features a much lower on state resistance per die area. This in turn simplifies designers' needs for high power designs by reducing the number of paralleled devices. In this slide we can see the test results of a StripFet F7 device housed in TO220 compared with competitors' devices. Not only is the on state resistance lower, but other figures as well, such as the figure of merit and the recovery diode, making this technology ideal for high frequency switching applications and synchronous rectification. Here we can see that by using our STP310N10F7 MOSFET in a typical DC to DC boost converter for solar applications, up to 1% of power dissipation can be saved at light load compared with a competitor's device. We have also performed a test in an LLC topology, SMPS. The efficiency curve shows how our device exhibits a higher efficiency over the entire current range. The very low on state resistance, combined with low switching losses, help simplify designs and reduce equipment size and cost in applications such as telecom or computing systems, solar inverters, industrial automation, and automotive applications. For additional information and the complete list of part numbers belonging to the StripFet F7 series of low voltage power MOSFETs, please visit www.st.com. www.stripfet.com.