 High-K dielectric materials are being investigated for their potential application in resistive random access memories, RAMS. These materials exhibit a unique property known as resistance switching, whereby they can be switched between two states of high and low resistance. This behavior is typically observed on a microscopic scale, making it difficult to analyze using traditional characterization techniques. To address this issue, researchers have employed atomic force microscopy, AFM, to study the resistance switching properties of high-K materials. The results of these studies suggest that the resistance switching mechanism may involve the formation of nanoscale domains within the material. This article was authored by Mario Lanza.