 Hello and welcome to the presentation High-Efficient Three-Phase PFC with SIG devices and digital control. With the design boards offered by ST, you can shorten your time to market when designing with silicon carbide devices. Both ports there to be discussed here are based on the T-Type 3 level, a widely used topology in applications like DC chargers, solar inverters and UPS systems. The boards are complete designs, which include both hardware and software portions. In ST's website you can find the full documentation of the boards, including schematics, pilof material and layout. Under special license agreement, you can also get access to the firmware of the controller device. The two design boards you see on this slide are based on the T-Type 3 level topology both rated for 15 kW. On the left-hand side, you see the unidirectional PFC board, implemented with 650V SIG MOSets and 1200V SIG tiles. In addition, there are also passive components as marked on the picture, as well as all sensing and signal devices, several of them from ST. The control of the full board can be done in two ways, fully digital, with ST's electrical controller STM32, or with a mixed signal device like the ST-energy 388A controller, whose information you also find in this presentation. On the right-hand side, there is the bidirectional active front-end board. It has the same topology, but the SIG tiles have been substituted by SIG MOSets in order to offer the bidirectional power processing. All other components are quite similar, and the control is done with a microcontroller from the newest STM32 G4 family. In both boards, the silicon kW MOSets are driven with K-Triver ICs from the STGAP2 family. Along this presentation, you also find a dedicated session about them. Here you see some practical results from the unidirectional PFC design board. On the upper left side, the waveforms during the system start up. On the upper right side, the circuit behavior during a step load variation. On the bottom right side, the measured power factor as function of the output power. And finally, on the bottom left side, the efficiency of the board also as function of the power. As you can see here, it goes well above 98%. The silicon kW or SIG is a wideband gap semiconductor material. Power devices out of SIG are ideal for applications that aim to high efficiency at high blocking voltage and high switching frequency. ST is the worldwide leader in SIG devices and offers an extended product portfolio. Our SIG MOSets have low parasitic capacitances as well as an extended junction temperature up to 200 degrees C in some packages. They enable fast commutation speed and safe operation at the same time. The SIG diodes have different optimizations according to application needs. Both SIG MOSets and SIG diodes have very low dynamic losses which allows the operation at high switching frequency. This enables the reduction of the passive elements inside the circuit like chokes and filters. In addition, high performance means also less semiconductor losses to dissipate, relief in the overall circuit thermal design. The chart represents the technology roadmap of ST SIG MOSets. On the YpsoN axis, the specific resistance of H-technology is plotted. The X-axis contains current and planet SIG MOSets The generation from ST is starting from generation 1, launched in 2014. Its portfolio contains devices rated for 1200V. Moving to the right, you find also generation 2, available in the market since 2018. It brings a great improvement on the specific resistance of the MOSFETs. In addition, the portfolio is now extended also to 650V devices and the operational gate voltage is reduced from 20 to 18V. Both Gen 1 and Gen 2 are based on the planar MOSFET structure. Same valid for Gen 3, now in development. Generation 4, still in pre-development, shall introduce the trench oxide structure. These will allow not even a further reduction of their own resistance, but also of the operational gate voltage to 15V. This is the product portfolio of ST SIG MOSets generation 1. They include 1200V rated devices in S-Song classes from 52 to 520mA at a gate voltage of 20V. Package offer includes the HIP247, an exclusive package able to operate up to 200°C junction temperature and pin-to-pin compatible to the standard TO247. In addition, the SMD components, like the H2Pack 2 and H2Pack 7 pin. The product portfolio of Gen 2 SIG MOSets contains devices rated for both 650V and 1200V. With the improved specific own resistance of Gen 2, it is possible to go down to 18mA devices in the 650V class, as well as 22mA in 1200V class. Some of the devices are automotive-qualified and are identified by the car symbol at the right side of the table. The package offer, in addition to the packages already available in Gen 1, is also extended with the HIP247 4 pin, which, in addition to the junction temperature max 200°C, includes also a calving source that improves the dynamic behavior of the MOSets even more. The 650V SIG SHOTIC PARADYLE from ST are divided in two families. On the left hand, you see the table with the low forward voltage family. It contains devices rated from 8A to 40A in different packages like TO247, TO220 and TO220i packages. On the right hand side, you see the table with the devices optimized for high surge current mode capability. It contains devices from 4 to 20A, also in different packages like TO247, TO220, D-square pack and D-pack. Brand new are the Powerflat devices 8x8, a low profile and very compact package offered in the range from 4A to 8A. The 1200V SIG diodes from ST are offered in an extended portfolio, from 2A to 40A. Available packages are D-pack, D-square pack, TO220 and TO2F7. Some of the devices indicated with the car symbol are automotive qualified. STGAP2 is the newest gate driver isolation technology from ST. Due to its very short propagation delay, typically 18 nanoseconds, and a high common mode noise immunity above 100V per nanosecond, STGAP2 is the perfect partner for SIG MOSSETs. The devices from STGAP2 have additionally very compact and clean designs. The single channel version contains indeed only 8 pins, whilst the dual channel has 16 pins. Two isolation categories are planned, the 1.7 KV inside an S1 error package is already launched in the market. The 6 KV version in SOI package is to be launched within 2020. The isolation technology from STGAP2 is the Coraless transformer. The first products launched in the market are inside narrow packages, 8 pins for the single channel called STGAP2S and 16 pins for the dual channel called STGAP2D. Both are rated for 1.7 KV and the current capability are 4A per channel for both sync and source current. All devices are qualified according to industrial grade. STGAP2S is a single channel driver. It is available in two configurations as shown in the block diagram at the lower side of this slide. The separated output version named STGAP2S-CM have turn-on and turn-off pins separated. It allows the use of different gate resistors for both commutation flanks without any external circuitry. The other configuration on the right side named STGAP2S-CM contains active mille-clamp function, an extremoset in addition to those from push-pull that clamps the voltage on the gate during the entire off-time of the main switch. This is the recommended part for operation with high-speed switches like sigmosfets, especially in double-end topologies like half-bridge and full-bridge. STGAP2D is a dual-channel driver able to drive two MOSFETs in half-bridge configuration. It includes all functionalities from the STGAP2 technology in addition to specific brake and shutdown pins for higher safety of the systems. Finally, it includes also an integrated interlocking, which avoids short-through of the lag due to bad sequence or disturbances in the input signals. The STNG388A is a mixed signal controller that can be configured to control a three-phase T-type converter thanks to its 6 PWM outputs. It offers mixed mode control, partial-digiton partial-analog that can be simply and fastly designed. Its dedicated programming software, ESuite Design, is a simple and efficient platform for designing and implementing the circuit control loop. STNG388A is a digital device designed for advanced power conversion applications such as PFC-LLC, Intellivet-LC-DC-DC, Intellivet-PFC for smart power supplies, as well as the full-bridge for pilot line drivers for electric vehicles. STNG388A features the unique high-resolution hardware-based configurable PWM generators, the SMEDs, state machines event-driven. Thanks to its 96 MHz clock, the integrated comparators and the hardware-based configuration, the SMEDs sustains the real-time requirement of power conversion applications, offering both precise timings as well as protection mechanisms in case of external failure. STNG388A integrates 32 KB of E2-Prom, 6 KB of RAM, NADC, op-amp, I2C port, and GPIOs to help implement a high-performance converter. Thank you very much for watching this presentation. For more details, please visit our website, www.st.com. Have a nice day and see you soon!