 This research focused on improving the thermoelectric properties of a half-hustler, HH, compound by reducing its defects. A pressure-controlled annealing process was used to reduce the number of point defects and modify the microstructure of the material. As a result, the carrier mobility increased by 100%, leading to a maximum power factor of 78 Wcm1k2, which approaches the theoretical value for a single crystal of the same material. Additionally, the material exhibited a high average Zt of 0.86 at temperatures ranging from 300 to 873k, which is higher than other HH materials. Furthermore, the device based on this material showed a 210% improvement in cooling power density over by 2 Te3-based devices and a conversion efficiency of 12%. This research demonstrates a promising strategy for optimizing HH materials for near-and-temperature thermoelectric applications. This article was offered by Hange Nzu, Wenjie Li, Aminos Aries Mars, and others. We are article.tv, links in the description below.