Loading...

nanoHUB-U Nanoscale Transistors L2.6: MOS Electrostatics - The VS Model Again

1,363 views

Loading...

Loading...

Transcript

The interactive transcript could not be loaded.

Loading...

Loading...

Rating is available when the video has been rented.
This feature is not available right now. Please try again later.
Published on May 20, 2014

Table of Contents:
00:09 L2.6: The VS Model Again
01:03 why is it called the VS model?
01:41 MOSFET: IV (2-piece approximation)
02:20 average velocity vs. VDS
03:02 channel charge vs. VGS
03:03 level 0 "Virtual Source model"
03:37 intrinsic vs. extrinsic voltages
04:49 improving the VS model: inversion charge
05:28 but first: let's discuss the subthreshold current
06:30 subthreshold swing
08:11 subthreshold swing
09:57 why is S gt 60 mV/decade?
10:49 relation between IOFF and ION
12:14 question
13:06 empirical treatment of inversion charge
14:02 empirical treatment of inversion charge
14:28 empirical treatment of inversion charge
15:39 output resistance
16:18 discussion
17:13 VS model
17:33 goals for week 3

This video is part of nanoHUB-U's course Nanoscale Transistors developed by Mark Lundstrom. (https://nanohub.org/courses/NT)

Nanoscale Transistors is a five-week online course that develops a unified framework for understanding essential physics of nanoscale transistors, their important applications, trends and directions, and how they differ from their micrometer scale cousins.

Loading...


to add this to Watch Later

Add to

Loading playlists...