Table of Contents:
00:09 L2.6: The VS Model Again
01:03 why is it called the VS model?
01:41 MOSFET: IV (2-piece approximation)
02:20 average velocity vs. VDS
03:02 channel charge vs. VGS
03:03 level 0 "Virtual Source model"
03:37 intrinsic vs. extrinsic voltages
04:49 improving the VS model: inversion charge
05:28 but first: let's discuss the subthreshold current
06:30 subthreshold swing
08:11 subthreshold swing
09:57 why is S gt 60 mV/decade?
10:49 relation between IOFF and ION
13:06 empirical treatment of inversion charge
14:02 empirical treatment of inversion charge
14:28 empirical treatment of inversion charge
15:39 output resistance
17:13 VS model
17:33 goals for week 3
This video is part of nanoHUB-U's course Nanoscale Transistors developed by Mark Lundstrom. (https://nanohub.org/courses/NT)
Nanoscale Transistors is a five-week online course that develops a unified framework for understanding essential physics of nanoscale transistors, their important applications, trends and directions, and how they differ from their micrometer scale cousins.