 Hello, and welcome to this presentation on ST's new Silicon Carbide Power MOSFET. Based on the advanced and innovative properties of wide band gap materials, ST Silicon Carbide, or SIC MOSFETs, feature very low RDS on-times area for the 1200 volt rating combined with excellent switching performance, translating into more efficient and compact designs. Applications include solar inverters, power supplies, HEVs, and electric vehicles and traction systems. The main features and benefits of ST's Silicon Carbide MOSFETs include the industry's highest temperature rating of 200 degrees Celsius for improved thermal design of power electronic systems, a very low on-state resistance over the entire temperature range for higher system efficiency, significantly reduced switching losses, also at high frequency, with minimal variation versus the temperature for more compact designs, a cost-effective simplified gate circuitry, and a very fast and robust intrinsic body diode for more compact systems. This figure compares the variation of on-state resistance as temperature increases. Not only does our device reach the industry's highest temperature rating of 200 degrees Celsius, but it also achieves the lowest on-state resistance among comparable competition devices. It also shows a very tight on-state resistance variation as the temperature rises. The following table compares our 1200 volt, 80-milli ohm SIC MOSFET with a trench gate field stop IGBT of the same voltage rating and equivalent on-state resistance. You can see that the SIC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designers to operate at very high switching frequencies, which is one of the main advantages of SIC MOSFET technology versus existing silicon IGBT technology. In addition, the variation of eon and eoff with temperature is very small. For example, the eoff of the SIC MOSFET increases by only 25 percent as the temperature rises from 25 degrees Celsius to 175 degrees Celsius, while the eoff of the IGBT increases by 90 percent. When tested in a continuous current mode 5 kilowatt boost converter application board at a switching frequency of 100 kilohertz, ST's SIC MOSFET solution provides the highest efficiency at full load, as shown here. The silicon IGBT-based solution reached its practical limit at 4 kilowatts, so it is not a viable solution. The efficiency of the 1200 volt SIC MOSFET is almost the same as for the IGBT, even at 4 times the switching frequency. In this slide, we can see that the SIC MOSFET-based board is switching at 100 kilohertz, while the IGBT-based board is switching at 25 kilohertz. By operating at a much higher switching frequency than the IGBT-based solution, the SIC MOSFET solution enables much smaller, lighter, and cost-effective designs. Such benefits have been demonstrated in a study conducted with an Italian coil maker. By using our SIC-based 5 kilowatt boost converter, they reduce the volume by 60 percent, the losses by 30 percent, the weight by 60 percent, and have cut the costs in half. Another advantage of SIC MOSFETs is that driving them is almost as easy as driving silicon MOSFETs and IGBTs. You just need a plus 20 volt gate drive to get the right on-state resistance and an adequate current capability to ensure high switching speed, 3 to 5 amps would be best. ST's TD350E driver, widely used for driving silicon IGBTs, is a good option when a buffer stage is required to obtain the proper current capability. Thanks for your attention. For further information, please visit www.st.com.sicmos.