 Abstract monolayer molybdenum disulfide, ML-MOS2, is a promising 2-dimensional, 2D, semiconductor with potential applications in flexible integrated circuits, ICS. We developed a novel fabrication method for creating thin film transistors from high-quality monolayers of ML-MOS2 on both rigid and flexible substrates. This process allows for operation of the devices in the deep sub-the-should regime with low power consumption and negligible hysteresis, as well as high current density and ultra-low leakage currents. Furthermore, our process enables the creation of fully functional large-scale flexible ICS operating at voltages below 1V. These results suggest that ML-MOS2 could be used in portable, wearable, and implantable electronics. This article was authored by Jian Tang, Qingqing Wang, Jingpeng Qian, and others.