 High electron mobility transistors, HEMTs, based on gallium nitride, GON, technology have been developed as a new type of power electronics device. These devices offer improved performance compared to traditional silicon or silicon carbide metal oxide semiconductor field effect transistors, MOSFETs, making them ideal for high voltage and low voltage applications. GON HEMTs can be used in DC-DC and DC-AC converters, offering faster switching speeds and better efficiency than their predecessors. However, there are still some challenges associated with GON HEMTs, such as the need for more complex circuitry and the potential for damage from high voltages. Despite this, GON HEMTs are likely to become increasingly popular in power electronics applications due to their superior performance. This article was authored by Salvatore Musumechi and Incenso Barba.