 Atomic scale details of the formation of point defects and their evolution to phase transformation in silicon SI implanted beta G2O3 were studied using high-resolution scanning transmission electron microscopy, STEM. The effect of C implantation and the formation of defects was studied as a function of the dose of implanted atoms, and the detailed mechanism of lattice recovery was observed using both in situ and ex situ annealing of the implanted beta G2O3. The implantation created nanoscale dark spots in STEM images, which we identified as local gamma G2O3 inclusions generated by the relaxation of lattice due to 010 screw dislocations created by the implantation. The number and size of gamma G2O3 regions increased as the C dose increased, and eventually the gamma G2O3 crystal phase, with stacking defects, took over the entire implanted volume when the peak C concentration was over till the operator 1,020 CM,3 annealing above 1,100 degrees Celsius disintegrates the local gamma G2O. This article was authored by Shinlin Huang, Christopher Chai, Jared M. Johnson, and others. We are article.tv, links in the description below.