 Epitaxial law doped by SN03 films were grown using molecular beam epitaxy with the excess volatile SN-Ox disorbing from the film surface. Despite having a high concentration of threading dislocations, the film still had a mobility of 183 square centimeters per versus at room temperature and 400 square centimeters per versus at 10K. The presence of these dislocations was reduced compared to previous studies, suggesting that other defects such as bouth, two-ruddelsten popper crystallographic shear faults or point defects may also be responsible for reducing the electron mobility. This article was authored by Han Jong-Pak, Jin Chen, Edward Luchaki, and others.