Upload

Loading...

100_20eV.avi

1,869

Loading...

Loading...

Loading...

Rating is available when the video has been rented.
This feature is not available right now. Please try again later.
Uploaded on Dec 7, 2008

Illustration of how a defect (Frenkel pair, i.e. an interstitial and vacancy) is formed in silicon when a lattice atom is given a recoil energy of 20 eV in the 100 direction. The data for the animation has been obtained from the SIESTA density functional theory computer simulation code. For more information see the scientific article E. Holmström, A. Kuronen, and K. Nordlund, Threshold defect production in silicon determined by density functional theory molecular
dynamics simulations, Physical Review B 78, 045202 (2008). Animation made by Eero Holmström in 2007, uploaded with his permission by Kai Nordlund.

Loading...

When autoplay is enabled, a suggested video will automatically play next.

Up next


to add this to Watch Later

Add to

Loading playlists...