 A new wave is coming in the power conversion world. ST's Master GAN is the world's first solution exploiting GAN potential thanks to its higher level of integration. The future of energy is towards greater energy efficiency and power density. GAN power FETs bring a quantum leap by enabling high-speed increased efficiency and higher power density into many applications. ST's Master GAN is the world's first 600 volt half-bridge gate driver with two GAN high-electron mobility transistors devices in a single package. A higher integration that offers higher efficiency, reducing power losses and power consumption. A higher power density will increase switching frequency and simplify the design with a compact single-chip solution. System size will be four times smaller and three times lighter for AC-DC adapters, smartphone ultra-fast and wireless chargers. In server's power supply, Master GAN enables designs with up to 50% higher power density and 20% reduction of power losses contributing to saving our planet resources. Master GAN helps handle more power. Power supply for solar energy storage systems are up to two times smaller and three times lighter. Master GAN platform uses the same GQFN 9x9 package that let engineers scale successful designs with minimal hardware changes. ST, a leader in power conversion, will ride this new wave of innovation with a continuous introduction of new products and solutions. For more information, go to www.st.com.