 Welcome at CES 2019. My name is Alfredo Arno and I'm marketing manager, automotive, discreet products and modules in North America. Here at CES, with our display at Electromobility, we're displaying the new wave of electric vehicle revolution, which has been also enabled by power semiconductor electronics. The electric vehicle has three main power blocks that are connected to the high voltage battery of the car. There's the traction inverter, the on-board charger and the DC-DC converter. These three main blocks pose a serious challenge on the power semiconductor. Silicon carbide is a wide band-get material, meaning that it can provide much higher voltages, faster switching, in narrow geometry when you compare to conventional silicon. In other words, with silicon carbide we're providing much more power and much lower losses inside a single component. In fact, when we tried silicon carbide MOSFET in a traction inverter, we're able to provide longer range per battery charge and we see much farther reduced footprint of the solution. We compare a single traction inverter, silicon carbide with a traction inverter designed with IGBTs. There is another power block in the electric vehicle ecosystem that can take advantage of this technology and that's the large DC-DC converter that we use in the fast charging station. The more power you push DC into the battery, the faster the charging time. Today with the fast charger we can charge the car in less than 30 minutes. ST has been at the forefront of this technology. We've been developing silicon carbide for over 20 years and we've been the first in the market introducing silicon carbide diodes and MOSFETs. Lately we're introducing a full new series of packages including power modules with silicon carbide and also conventional silicon to provide full solution for onboard charger, DC-DC converter, traction inverter and charging station. But here at CS we also want to mention that although silicon carbide is at the forefront of this revolution, conventional silicon is still largely of use with power components like IGBT, power MOSFETs, diodes and tarisor which we have been developing for electric vehicle in the recent past. But also integrated circuitry capable of doing the communication and metrology on the power line necessarily for the charging station. And last but not the least, the integrated gate driver that can drive safely the power component for the lifetime like our ST gap which is galvanic isolated. In conclusion, electric vehicle, high voltage, high power battery pose a serious challenge on power semiconductor. ST has developed a full series of components and solutions for the electric vehicle ecosystem including silicon carbide modules and galvanic isolated driver. For more information please visit ST.com.