 This paper presents a novel approach to integrating high-k dielectric layers onto two-dimensional, 2D, semiconductor materials such as molybdenum disulfide, MOS2. The authors use atomic layer deposition, ALD, to create ultra-thin dielectric layers of aluminum oxide, AL203, or hafnium dioxide, HFO2, which are then transferred onto the 2D material. This allows for the creation of wafer scale and high-quality dielectrics, which are essential for high-performance electronics. The resulting devices demonstrate excellent electrical characteristics, including low leakage current, high capacitance, and low interface state density. Additionally, this technique is compatible with existing industry processes, making it possible to integrate high-k dielectrics into existing manufacturing lines. This article was authored by Zhilu, Yang Chen, Weichu Dang, and others.