 This paper presents a novel approach to engineering the depletion region formed between two-dimensional black phosphorus and indium selenide layers in order to achieve high sensitivity photo-detection. By utilizing ferroelectric field control, the authors were able to align the energy bands at the heterojunction interface and reconstruct the depletion region. As a result, they were able to achieve fast response, self-driven photo-detection, and three orders of magnitude improvement in the visible or near-infrared operation bands. This article was authored by Jian Wang, Chang Long Lu, Li Bo Zhang, and others.