 The literature on polar gallium nitride, GON, surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices has been reviewed. It was found that the GON growth technique and growth parameters have a significant impact on the properties of GON epilayers. Additionally, it was discovered that certain surface modifications can be achieved through both in situ and exit to processes. Furthermore, progress has been made in understanding and improving the performance of GON metal oxide semiconductor, MOS, devices. However, there is still much to learn about the connections between these topics. Challenges in analyzing defect concentrations and energies in GON MOS gate stacks were also discussed. Finally, promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, combined with more advanced physical and electrical characterization methods could lead to faster development of GON-based MOS technology. This article was authored by Paul C. McIntyre and Rathnate D. Long. We are article.tv, links in the description below.