 This paper presents a new method for growing molybdenum disulfide, MOS2, nanosheets using chemical vapor deposition, CVD. The authors used a tellurization process to selectively grow either one T or two H phase MOS2 nanosheets from a pre-deposited molybdenum film. They optimized the growth conditions to achieve high quality MOS2 nanosheet arrays with controlled thickness and morphology. The resulting MOS2 nanosheets can be used in applications such as micro- and nano-electronics, spintronics, photonics, and thermoelectrics. This article was authored by Panakapani Tamala, Saragomi, Carlos Bartacocassari, and others.