 The study examined the effect of b-related centers on the minority carrier lifetime in 4-H sick epitaxial layers. These centers were found to be a major factor in reducing the lifetime of the minority carriers, especially when combined with other defects such as Z1 slash 2. By adjusting growth conditions, such as growth temperature and carbon content, the researchers were able to reduce the number of b-related centers and improve the minority carrier lifetime. This could lead to improved performance of CC-based bipolar devices. This article was authored by Missa Gazella, Piyush Kumar, Marian E. Bathen, and others.