 This paper proposes a novel method for achieving selective deposition of dielectric materials on metal surfaces using Area Selective Atomic Layer Deposition, ASALD. The authors demonstrate that a self-assembled monolayer, SAM, of dodeconephial, DDT, can be used to protect copper surfaces from subsequent deposition of octazole trimethoxysylene, OTMS, allowing for selective deposition of OTMS on silicon dioxide, SiO2, while leaving the copper untouched. Additionally, the authors show that removal of the DDT SAM prior to atomic layer deposition, ALD, allows for selective deposition of zinc oxide, ZNO, and aluminum oxide, Al2O3, on copper without affecting the copper surface. This technique could potentially open up new possibilities for applications such as microelectronics, optoelectronics, and energy. This article was authored by Tsu-Ling Lu, Maddie Rake, and Stacey F. Bent. We are article.tv, links in the description below.