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Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD - Part 1/4

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Published on Jul 28, 2010

This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. Different alloy concentrations of the strain layer tune the optical emission and absorption wavelength of the quantum dots. The role of the non-linear strain behavior ovserved in the experimental data is explored in NEMO3D. The simulation engine serves as a virtual microscope to understand the interplay of disorder, strain, and quantum dot shape.

Learning Objectives:

Objective:
Optical emission at 1.5μm without GaN
Understand experimental data on QD spectra in selective overgrowth
Approach:
Model large structure
60nm x 60nm x 60nm
9 million atoms
No changes to the published tight binding parameters
Result:
Match experiment remarkably well
Strain
change in quantum dot aspect ratio
Quantitative model of complex system
Studied sensitivity to experimental imperfections -- small variations
Effective mass theories provided the wrong guidance


On nanoHUB: http://nanohub.org/resources/9272

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