 The crystal structure and chemical distribution of the HFC-Ox slash tan layers were analyzed using X-ray diffraction, X-RD, and X-ray photoelectron spectroscopy, XPS, respectively. The point slash HFC-Ox slash tan memrister was confirmed by transmission electron microscopy, TEM, and showed analog bipolar switching behavior with high endurance stability, 1,000 cycles, long data retention performance, 104 s, and uniform voltage distribution. Its multilevel capability was demonstrated by restricting current compliance, CC, and stopping the reset voltage. The memrister exhibited synaptic properties, such as short term plasticity, excitatory post-synaptic current, EPSC, spiking rate, dependent plasticity, SRDP, post-etanic potentiation, PTP, and paired pulse facilitation, PPF. Furthermore, it demonstrated 94.6% pattern accuracy in neural network simulations. Thus, AHFC-Ox based memristers have great potential for use in multilevel memory and neuromorphic computing. This article was offered by Muhammad Ismail, Maria Rashid, Chandra Swarmohada, and others. We are article.tv, links in the description below.