 This paper presents a novel device structure called Memtransistor that combines the functions of a logic gate and a memory element. The device consists of a semiconductor material treated with oxygen plasma, which creates a unique combination of shallow and deep trap levels that allow for the execution of four different logic gates. These gates can be switched between two different states by simply changing the voltage applied to the gate electrodes. Additionally, this device can also store data as a memory element, allowing it to function as a single device that performs both logic and memory operations. This device has been successfully used to represent the uppercase letter and using only eight transistors. This device could have applications in neuromorphic computing where it could be used to mimic the brain's ability to process information. This article was authored by Shania Raymond, Mohamed Iskher Khan, Hong-Yen Kim, and others.