 We have developed a new method for growing beta-G8203 crystals using suboxide molecular beam epitaxy, SMBE. This method allows us to achieve a growth rate of 1 micrometer per hour while maintaining high structural quality and smooth surfaces. Additionally, we can dope the crystal with silicon atoms to create semiconductor devices. This article was authored by Kathy Azizy, Felix the Fifth E. Hensling, Cameron A. Gorsak, and others.