 Hello and welcome to ST Power Solutions for car electrification. My name is Ardeshure Esmaily and I'm a product marketing engineer based in ST America's region. Let's look at some of the major trends we see in electric vehicle design. An important trend is increase in battery voltage from 400V to 800V. One benefit of this higher battery voltage is to achieve higher power. Increase in battery voltage gives us the ability to reduce the size of subsystem resulting in system lightness leading to higher mileage per charge. Higher battery voltage in EVs can also reduce the charging time. Another major trend is system integration. Now it is common to integrate different power electronic subsystems within EVs. A common example of integration is in onboard chargers. We can now find the auxiliary DC to DC converter as part of onboard charger within the vehicle. Here in this slide we show the power electronic subsystem mapping and their interconnections. Three main subsystems as shown on the left are traction inverter, high voltage DC to DC converter and onboard charger. The traction inverter is the subsystem driving the motor ensuring bidirectional AC to DC conversion and DC to AC inversion between the high voltage battery and the electric motor. It is key to enhance the efficiency of traction inverter as this subsystem requires the highest operating power in an electric vehicle. The DC to DC converter converts high voltage to low voltage to supply other electronic systems in the vehicle such as infotainment. The onboard charger architecture seen on the bottom right side of this slide is responsible for converting AC power to DC power to charge the high voltage battery and speed up the charging time. On the bottom left hand side you can see the key power technologies that enable the design of aforementioned power electronic subsystems. In this slide we talk about positioning of different high voltage power transistors. IGBTs are capable of high current and high power delivery while they have limitations in regards to switching frequency. Silicon carbide is a very robust material. This is a great material for high temperature and high power applications. SIC MOSFETs are the key enabler of high efficiency in power converters and inverters. With silicon carbide technology not only we can deliver high current and high power but also we can design converters and inverters with higher switching frequency to achieve system compactness and lightness. SIC is a key technology required for higher driving mileage in electric vehicles. On the other hand, gallium nitrite technology is suitable for low to medium power applications and this wide bandgap material is tailored towards very high switching frequency to further achieve high power density in our converters. In this slide we go in more details of our silicon carbide technology. ST has silicon carbide market leadership in automotive space. We have a broad range of solutions including discrete devices, bear die and modules. ST's enormous investment in silicon carbide technology and its vertical integration through acquisition of Nord-Stell AB will secure its SIC market leadership for decades to come. We continue to invest in capacity expansion to support market demand and we are also bringing our advanced packaging technology such as STPAC which is using silver sintering. We are currently releasing our third generation SIC MOSFETs with lower honested resistance and figure of merit. The key features of SIC technology in electric vehicles are car weight reduction, lower charging time and extended range. Our gallium nitrite technologies reinforces ST's leadership and strategic independence in power applications. ST plans to offer full range of GAN based power devices such as G-FET, G-HEMT and G-DRIVE. G-FET is a GAN cascode FET with 100% compatibility with the standard silicon gate drivers. G-HEMT is an enhanced mode ultra-fast 0QRR device well suited for very high frequency and power applications. G-DRIVE features ultra-fast GAN FET with embedded gate driver for higher system integration and simplifying board design. Now let's look at IGBT technology. IGBT is a high reliability and already been proven technology that is an enabler for EV traction inverter and other high power subsystems. ST brings high degree of flexibility to its customers by offering IGBT's in discrete packages, bear die and modules. On the right hand side you can find some of our automotive grade IGBT series featuring optimum performance and power density. ST offers a broad portfolio of automotive rectifier and thyristors. Rectifiers are important part of all EV subsystems. Our SIC diodes are available in 650V and 1200V featuring extremely low recovery losses. Ultra-fast rectifiers are suitable for high power LLC resonant topology and secondary side rectification. ST's rectifier portfolio comes with innovative packages with ultra-low profile and topside cooling to facilitate better thermal performance. So finally let's go through key takeaways from this presentation. ST offers a broad range of wide band gap and silicon technologies allowing us to address different subsystems. We continue our investment to increase capacity to ensure supporting demands by our customers. Development of innovative packages such as silver sintering for better thermal performance and higher reliability in EV subsystems. The addition of GAN technology to our portfolio reinforces ST's leadership in the industry. Our standard and customized solutions brings flexibility to address customer needs.