 MOS-2 flakes are prepared by low-pressure chemical vapor deposition onto P-type and N-type silicon substrates. Post-treatment under nitrogen-rich conditions introduces nitrogen atoms into sulfur vacancies. UPS measurements show an increase in work function of 0.47EV in 0.53EV for P-type and N-type substrates, respectively. Photodetection experiments conducted for both doped and undoped MOS-2 grown on P-type substrates reveal a decrease in the value of photoresponsivity from 572A-W for undoped MOS-2 to 191A-W for N-2, doped MOS-2. For N-type substrates, N-2 doping results in an enhancement of the photoresponsivity from 63A-W for undoped MOS-2 to 606A-W for N-2, doped MOS-2. The modulation of shocky barrier height for N-2 doped MOS-2 on P-type substrate decreases while for N-type substrate the high electric field created due to the... This article was authored by Gotham Paulyamati, Chandrasekhar Riddikoli, Venkatrao Salamnini, and others. We are article.tv, links in the description below.