 Graphene-ZNO heterostructures have been shown to exhibit excellent thermoelectric properties, making them promising candidates for flexible and wearable thermoelectric devices. In particular, these structures show a large figure of merit, ZT greater than 2.4, at room temperature and low carrier concentrations, less than 1011 cm2, which is significantly higher than that of single-layered graphene or bulk ZNO. Furthermore, the ZNO-slash-graphene heterostructure can maintain a high ZT value even at lower temperatures, 300 K, and carrier concentrations, 1010 cm2. These results suggest that the ZNO-slash- graphene heterostructure could be used as a promising candidate for flexible and wearable thermoelectric devices. This article was authored by Brheem Marfua and Ji Sang Hong.