 The ultra-thin MOO-3 semiconductor nanostructures have gained significant attention due to their exceptional reactivity, which has led to them being considered for use in transparent nano and optoelectronics. However, there is still a lack of knowledge regarding the electronic and optoelectronic properties of Mu3 slash NC, when it is prepared by atomic layer deposition, ALD, at various temperatures of 100 degrees Celsius, 150 degrees Celsius, 200 degrees Celsius, and 250 degrees Celsius. In this study, the authors utilized the preparation of an ultra-thin MOO-3 film at these temperatures to investigate its effect on the optical and electrical properties of the material. They report that the ONO-FF and photodetector dynamic behaviors of these samples are affected by the temperature of the ALD process, with the best results being achieved at 200 degrees Celsius. These results showed that the ultra-smooth and homogeneous films of less than 0.30 nanometers roughness, deposited at 200 degrees Celsius, were efficient for high-performance UV photodetector behaviors with a high. This article was authored by Mohamed Abasuni, A.E.H. Gabballa, Mohamed Tidy, and others. We are article.tv, links in the description below.