 Topological edge states offer the prospect of dissipationless transport for nano-electronics, but a precise method to spatially engineer such nanoscale conducting channels is still lacking. Here, the authors demonstrate patterning of topological boundary states in SB2TE3 using a focused ion beam to create amorphous, topologically trivial regions. This article was authored by Abdul Hakeem Baik, Qi Zhong, Song Sun Hao, and others.