 SCLN is a promising material for three nitride semiconductors due to its large piezoelectric and spontaneous polarization coefficients, which can be grown lattice matched with GON. In this study, SCLN was grown using molecular beam epitaxy with ammonia as the nitrogen precursor. Temperature was varied from 620 to 800 degrees Celsius, and the resulting crystal structure was characterized by X-ray diffraction. Two-dimensional electron gas densities of 3 to 3.5 times 1,013 Cm-2 were observed when the growth temperature was kept below 720 degrees Celsius. This article was authored by Caroline Elias, Mod Nemez, Helene Rotella, and others.