 parafskite containing solar cells were fabricated using a two-step process involving the deposition of lead iodide, PBI2, followed by conversion into the CH3NH3PBI3 parafskite. The device performance was found to be optimized when the dipping time was kept under 15 minutes, with the best results achieved after 15 minutes. This was attributed to the presence of remnant PBI2, which acted as a blocking layer between the titanium dioxide semiconductor and the parafskite, thereby reducing charge recombination. Additionally, the presence of larger parafskite crystals at the interface between the whole transporting material and the parafskite was observed, which was also attributed to the remnant PBI2. This article was authored by Dian H. Chow, Konstantinos C. Stimpos, Christos D. Malliacas, and others.