 Abstract silicon is the most scalable optoelectronic material but has suffered from its inability to generate directly an efficiently classical or quantum light on chip. To address this issue, researchers have developed an all-silicon quantum light source based on a single atomic emissive center embedded in a silicon-based nanophotonic cavity. This device exhibits a more than 30-fold enhancement of luminescence, a near-unity atom-cavity coupling efficiency, and an eight-fold acceleration of the emission from the all-silicon quantum emissive center. The results open immediate avenues for large-scale integrated cavity quantum electrodynamics and quantum light matter interfaces with applications in quantum communication and networking, sensing, imaging, and computing. This article was authored by W. Regem, Y. Gnbyev, W. Karani, and others.